Display device having transmission area and electronic apparatus

ABSTRACT

A display device includes two pixel circuits spaced apart from each other with a transmission area therebetween, a first insulating layer on the two pixel circuits, two pixel electrodes on the first insulating layer, and a second insulating layer including a first portion covering an edge of each of the two pixel electrodes and a second portion, wherein the first insulating layer includes a third portion overlapping the two pixel electrodes, and a fourth portion having a height greater than a height from the substrate to a top surface of the third portion, wherein the first portion of the second insulating layer overlaps the third portion, and the second portion of the second insulating layer overlaps the fourth portion, wherein a height from the substrate to a top surface of the second portion is greater than a height from the substrate to a top surface of the first portion.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority to and the benefit of KoreanPatent Application No. 10-2020-0015204, filed on Feb. 7, 2020, in theKorean Intellectual Property Office, the disclosure of which isincorporated herein in its entirety by reference.

BACKGROUND 1. Field

Aspects of one or more example embodiments relate to a display deviceand an electronic apparatus including the same.

2. Description of Related Art

In the field of display devices for displaying images, organic lightemitting diode display devices have self-luminous characteristics, asopposed to liquid crystal display devices, which generally utilize abacklight for illumination. Thus, because organic light emitting diodedisplay devices may not utilize a separate light source, they maygenerally have a relatively reduced thickness and weight compared toalternative display devices. Also, the organic light emitting diodedisplay devices may exhibit relatively high-quality characteristics suchas relatively low power consumption, relatively high luminance, andrelatively high response speeds.

The above information disclosed in this Background section is only forenhancement of understanding of the background and therefore theinformation discussed in this Background section does not necessarilyconstitute prior art.

SUMMARY

The above-described organic light emitting diode display device shouldhave high contrast and luminance but may have low contrast when externallight is bright. In order to prevent or reduce this, a pixel definitionlayer having a certain color (e.g., black) may be formed. In the case offorming a colored pixel definition layer, a spacer should be formed on apixel definition layer through a separate process.

In order to address aspects of the above-described issues, embodimentsof some example embodiments may include a display device and anelectronic apparatus including the same, which may prevent or reducedegradation of a display element with respect to external light, mayreduce the noise included in information to be obtained from a componentsuch as a camera by reducing the external light propagating to thecomponent, and/or may simplify a process thereof. However, theseproblems are merely examples and the scope of embodiments according tothe present the disclosure are not limited thereto.

Additional aspects will be set forth in part in the description whichfollows and, in part, will be apparent from the description, or may belearned by practice of the presented embodiments.

According to one or more example embodiments, a display device includesa substrate, two pixel circuits on the substrate and spaced apart fromeach other with a transmission area therebetween, the two pixel circuitseach including a transistor and a storage capacitor, a first insulatinglayer on the two pixel circuits, two pixel electrodes on the firstinsulating layer and respectively connected to the two pixel circuits,and a second insulating layer including a first portion covering an edgeof each of the two pixel electrodes and a second portion adjacent to thefirst portion, wherein the first insulating layer includes a thirdportion overlapping each of the two pixel electrodes, and a fourthportion adjacent to the third portion and having a height greater than aheight from the substrate to a top surface of the third portion, whereinthe first portion of the second insulating layer overlaps the thirdportion, and the second portion of the second insulating layer overlapsthe fourth portion, wherein a height from the substrate to a top surfaceof the second portion is greater than a height from the substrate to atop surface of the first portion.

According to some example embodiments, the second insulating layer mayinclude a colored pigment or a carbon black.

According to some example embodiments, each of the first insulatinglayer and the second insulating layer may include a hole correspondingto the transmission area.

According to some example embodiments, the display device may furtherinclude at least one inorganic insulating layer between the substrateand the first insulating layer, wherein the at least one inorganicinsulating layer may include a hole corresponding to the transmissionarea.

According to some example embodiments, the first insulating layer mayinclude a photosensitive organic insulating material.

According to some example embodiments, the display device may furtherinclude an opposite electrode facing the two pixel electrodes, and anintermediate layer between each of the two pixel electrodes and theopposite electrode.

According to some example embodiments, the opposite electrode mayinclude a hole corresponding to the transmission area.

According to some example embodiments, the intermediate layer mayinclude an emission layer overlapping each of the pixel electrodes, anda functional layer arranged under or over the emission layer.

According to some example embodiments, the display device may furtherinclude a back-side metal layer located between the substrate and thetwo pixel circuits.

According to some example embodiments, the back-side metal layer mayinclude a hole corresponding to the transmission area.

According to one or more example embodiments, a display device includesa substrate, and an array of a plurality of pixels including two pixelsarranged on the substrate and spaced apart from each other with atransmission area therebetween, wherein each of the two pixels includesa pixel circuit including a storage capacitor and a thin film transistorthat are on the substrate, a first insulating layer on the pixelcircuit, a pixel electrode on the first insulating layer andelectrically connected to the pixel circuit through a contact hole ofthe first insulating layer, a second insulating layer including a firstportion covering an edge of the pixel electrode and a second portionadjacent to the first portion, an opposite electrode facing the pixelelectrode, and an emission layer between the pixel electrode and theopposite electrode, wherein the first portion and the second portion ofthe second insulating layer include a colored material, wherein a heightfrom the substrate to a top surface of the second portion is greaterthan a height from the substrate to a top surface of the first portion.

According to some example embodiments, the first insulating layer mayinclude a third portion overlapping the pixel electrode, and a fourthportion adjacent to the third portion and having a height greater than aheight from the substrate to a top surface of the third portion, whereina height from the substrate to a top surface of the third portion and aheight from the substrate to a top surface of the fourth portion may bedifferent from each other.

According to some example embodiments, the first portion of the secondinsulating layer may overlap the third portion and the second portion ofthe second insulating layer may overlap the fourth portion.

According to some example embodiments, the second insulating layer mayinclude a colored pigment or a carbon black.

According to some example embodiments, each of the first insulatinglayer and the second insulating layer may include a hole correspondingto the transmission area.

According to some example embodiments, the display device may furtherinclude at least one inorganic insulating layer located between thesubstrate and the first insulating layer, wherein the at least oneinorganic insulating layer may include a hole corresponding to thetransmission area.

According to some example embodiments, the opposite electrode mayinclude a hole corresponding to the transmission area.

According to some example embodiments, the display device may furtherinclude a back-side metal layer located between the substrate and thepixel circuit.

According to one or more example embodiments, an electronic apparatusincludes a display device including a display area including atransmission area and a non-display area surrounding the display area,and a component arranged to overlap at least the transmission area,wherein the display device includes a substrate, a pixel circuit in thedisplay area and including a storage capacitor and a thin filmtransistor on the substrate, a first insulating layer on the pixelcircuit, a pixel electrode on the first insulating layer andelectrically connected to the pixel circuit through a contact hole ofthe first insulating layer, and a second insulating layer including afirst portion covering an edge of the pixel electrode and a secondportion adjacent to the first portion, wherein the first portion and thesecond portion of the second insulating layer include a coloredmaterial, wherein a height from the substrate to a top surface of thesecond portion is greater than a height from the substrate to a topsurface of the first portion.

According to some example embodiments, the second insulating layer mayinclude a colored pigment or a carbon black.

According to some example embodiments, the second insulating layer mayinclude a hole corresponding to the transmission area.

According to some example embodiments, the first insulating layer mayinclude a third portion overlapping the pixel electrode, and a fourthportion adjacent to the third portion and having a height greater than aheight from the substrate to a top surface of the third portion, whereina height from the substrate to a top surface of the third portion may besmaller than a height from the substrate to a top surface of the fourthportion.

According to some example embodiments, the first insulating layer mayinclude a photosensitive organic insulating material.

According to some example embodiments, the first insulating layer mayinclude a hole corresponding to the transmission area.

According to some example embodiments, the display device may furtherinclude a back-side metal layer between the substrate and the pixelcircuit.

According to some example embodiments, the component may include acamera or a sensor using light.

Other aspects, features, and characteristics of other than thosedescribed above will become apparent from the accompanying drawings, theappended claims, and the detailed description of the disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features, and characteristics of certainexample embodiments will be more apparent from the following descriptiontaken in conjunction with the accompanying drawings, in which:

FIG. 1 is a perspective view illustrating an electronic apparatusincluding a display device according to some example embodiments;

FIGS. 2A and 2B are cross-sectional views illustrating a portion of anelectronic apparatus including a display device according to someexample embodiments;

FIG. 3 is a plan view schematically illustrating a display deviceaccording to some example embodiments;

FIG. 4 is an equivalent circuit diagram schematically illustrating anyone pixel of a display device according to some example embodiments;

FIG. 5A is a plan view illustrating an emission area of a first displayarea in a display device according to some example embodiments;

FIGS. 5B and 5C are plan views illustrating an emission area and atransmission area of a second display area in a display device accordingto some example embodiments;

FIG. 6 is a cross-sectional view illustrating a portion of a displaydevice according to some example embodiments;

FIG. 7 is a cross-sectional view illustrating a portion of a displaydevice according to some example embodiments;

FIG. 8 is a cross-sectional view illustrating a portion of a displaydevice according to some example embodiments; and

FIG. 9 is a cross-sectional view illustrating a portion of a displaydevice according to some example embodiments.

DETAILED DESCRIPTION

Reference will now be made in more detail to aspects of some exampleembodiments, which are illustrated in the accompanying drawings, whereinlike reference numerals refer to like elements throughout. In thisregard, the present disclosure may be embodied in many different formsand should not be construed as being limited to the descriptions of theexample embodiments set forth herein. Accordingly, the exampleembodiments are merely described below, by referring to the figures, toexplain aspects of the present description. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items. Throughout the disclosure, the expression “atleast one of a, b or c” indicates only a, only b, only c, both a and b,both a and c, both b and c, all of a, b, and c, or variations thereof.

Hereinafter, aspects of some example embodiments will be described inmore detail with reference to the accompanying drawings, and in thefollowing description, like reference numerals will denote like elementsand redundant descriptions thereof will be omitted.

It will be understood that although terms such as “first” and “second”may be used herein to describe various components, these componentsshould not be limited by these terms and these terms are only used todistinguish one component from another component.

As used herein, the singular forms “a,” “an,” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise.

It will be understood that terms such as “comprise,” “include,” and“have” used herein specify the presence of stated features orcomponents, but do not preclude the presence or addition of one or moreother features or components.

It will be understood that when a layer, region, or component isreferred to as being “on” another layer, region, or component, it may be“directly on” the other layer, region, or component or may be“indirectly on” the other layer, region, or component with one or moreintervening layers, regions, or components therebetween.

Sizes of components in the drawings may be exaggerated for convenienceof description. In other words, because the sizes and thicknesses ofcomponents in the drawings are arbitrarily illustrated for convenienceof description, the disclosure is not limited thereto.

When a certain embodiment may be implemented differently, a particularprocess order may be performed differently from the described order. Forexample, two consecutively described processes may be performedsubstantially at the same time or performed in an order opposite to thedescribed order.

It will be understood that when a layer, region, or component isreferred to as being “connected to” another layer, region, or component,it may be “directly connected to” the other layer, region, or componentor may be “indirectly connected to” the other layer, region, orcomponent with one or more intervening layers, regions, or componentstherebetween. For example, it will be understood that when a layer,region, or component is referred to as being “electrically connected to”another layer, region, or component, it may be “directly electricallyconnected to” the other layer, region, or component or may be“indirectly electrically connected to” the other layer, region, orcomponent with one or more intervening layers, regions, or componentstherebetween.

FIG. 1 is a perspective view illustrating an electronic apparatusincluding a display device according to some example embodiments.

Referring to FIG. 1 , an electronic apparatus 1 may include a displayarea DA and a non-display area NDA adjacent to (e.g., around a peripheryof) the display area DA. The electronic apparatus 1 may provide an imagethrough an array of a plurality of pixels two-dimensionally arranged inthe display area DA. The plurality of pixels may include first pixels P1arranged in a first display area DA1 and second pixels P2 arranged in asecond display area DA2.

The electronic apparatus 1 may provide a first image by using lightemitted from a display element included in each of the first pixels P1arranged in the first display area DA1 and may provide a second image byusing light emitted from a display element included in each of thesecond pixels P2 arranged in the second display area DA2. The firstimage and the second image may be a portion of an image provided throughthe display area DA of the electronic apparatus 1. Alternatively, thefirst image and the second image may be images independent of eachother.

The second display area DA2 may include a transmission area TA locatedbetween adjacent second pixels P2. The transmission area TA may be anarea through which light and/or sound may pass and no pixel is arrangedtherein. Because the second display area DA2 includes the transmissionarea TA, the number of second pixels P2 per unit area may be smallerthan the number of first pixels P1 per unit area.

The non-display area NDA may be an area that does not provide or displayimages, and no pixels may be arranged in the non-display area NDA. Thenon-display area NDA may entirely surround the display area DA. A driveror the like for providing an electrical signal or power to the firstpixels P1 and the second pixels P2 may be arranged in the non-displayarea NDA. The non-display area NDA may include a pad that is an area towhich an electronic device or a printed circuit board may beelectrically connected.

As illustrated in FIG. 1 , the second display area DA2 may have acircular or elliptical shape on a plane. Alternatively, the seconddisplay area DA2 may have a polygonal shape such as a tetragon.

The second display area DA2 may be arranged inside the first displayarea DA1. The second display area DA2 may be entirely surrounded by thefirst display area DA1. In some embodiments, the second display area DA2may be partially surrounded by the first display area DA1. For example,the second display area DA2 may be partially surrounded by the firstdisplay area DA1 while being located at a corner portion of the firstdisplay area DA1.

The ratio of the second display area DA2 to the display area DA may besmaller than the ratio of the first display area DA1 to the display areaDA. The electronic apparatus 1 may include one second display area DA2as illustrated in FIG. 1 or may include two or more second display areasDA2.

The electronic apparatus 1 may include a mobile phone, a tablet PC, anotebook, a smart band, or a smart watch worn on a wrist.

FIGS. 2A and 2B are cross-sectional views illustrating a portion of anelectronic apparatus including a display device according to someexample embodiments.

Referring to FIGS. 2A and 2B, an electronic apparatus 1 may include adisplay device 10 and a component 20 arranged to overlap the displaydevice 10.

The display device 10 may include a substrate 100, a display layer 200arranged on the substrate 100, a thin film encapsulation layer 300 onthe display layer 200, a touch input layer 40, and an optical functionallayer such as an optical plate 50A (FIG. 2A) or a filter plate 50B (FIG.2B).

The substrate 100 may include glass or polymer resin. The polymer resinmay include polyether sulfone, polyacrylate, polyether imide,polyethylene naphthalate, polyethylene terephthalate, polyphenylenesulfide, polyarylate, polyimide, polycarbonate, or cellulose acetatepropionate. The substrate 100 including the polymer resin may beflexible, rollable, or bendable. The substrate 100 may have a multilayerstructure including an inorganic layer and a layer including the abovepolymer resin.

The display layer 200 may be arranged on the front surface of thesubstrate 100, and a lower protection film 175 may be arranged on therear surface of the substrate 100. The lower protection film 175 may beattached to the rear surface of the substrate 100. An adhesive layer maybe located between the lower protection film 175 and the substrate 100.Alternatively, the lower protection film 175 may be directly formed onthe rear surface of the substrate 100, and in this case, an adhesivelayer may not be located between the lower protection film 175 and thesubstrate 100.

The lower protection film 175 may function to support and protect thesubstrate 100. The lower protection film 175 may include an opening175OP corresponding to the second display area DA2. Because the lowerprotection film 175 includes the opening 175OP, the light transmittanceof the second display area DA2, for example, the light transmittance ofthe transmission area TA, may be improved. The lower protection film 175may include polyethylene terephthalate (PET) or polyimide (P1).

The display layer 200 may include a circuit layer including a thin filmtransistor TFT, a display element layer including an organic lightemitting diode OLED as a display element, and an insulating layer IL. Athin film transistor TFT and an organic light emitting diode OLEDelectrically connected to the thin film transistor TFT may be arrangedin each of the first display area DA1 and the second display area DA2.The second display area DA2 may include a transmission area TA in whicha thin film transistor TFT and an organic light emitting diode OLED arenot arranged.

The transmission area TA may be an area through which the light emittedfrom the component 20 and/or directed to the component 20 may betransmitted. The transmittance of the transmission area TA may be about50% or more, about 60% or more, about 75% or more, about 80% or more,about 85% or more, or about 90% or more.

The thin film encapsulation layer 300 may include at least one inorganicencapsulation layer and at least one organic encapsulation layer.According to some example embodiments, the thin film encapsulation layer300 may include first and second inorganic encapsulation layers 310 and330 and an organic encapsulation layer 320 therebetween.

The touch input layer 40 may be configured to obtain coordinateinformation according to an external input, for example, a touch event.The touch input layer 40 may include a touch electrode and trace linesconnected to the touch electrode. The touch input layer 40 may beconfigured to sense an external input by a mutual cap method or a selfcap method.

The touch input layer 40 may be formed on the thin film encapsulationlayer 300. Alternatively, the touch input layer 40 may be separatelyformed and then coupled on the thin film encapsulation layer 300 throughan adhesive layer such as an optical clear adhesive (OCA). According tosome example embodiments, as illustrated in FIGS. 2A and 2B, the touchinput layer 40 may be directly formed on the thin film encapsulationlayer 300, and in this case, an adhesive layer may not be locatedbetween the touch input layer 40 and the thin film encapsulation layer300.

The optical functional layer may include an anti-reflection layer. Theanti-reflection layer may be configured to reduce the reflectance oflight (external light) incident from the outside toward the displaydevice 10.

According to some example embodiments, the anti-reflection layer mayinclude an optical plate 50A including a phase retarder and/or polarizeras illustrated in FIG. 2A. The phase retarder may be a film type or aliquid crystal coating type and may include a λ/2 phase retarder and/ora λ/4 phase retarder. The polarizer may also be a film type or a liquidcrystal coating type. The film-type polarizer may include a stretchedsynthetic resin film, and the liquid crystal coating-type polarizer mayinclude liquid crystals arranged in a certain arrangement.

According to some example embodiments, the anti-reflection layer mayinclude a filter plate 50B including a black matrix and color filters asillustrated in FIG. 2B. The filter plate 50B may include a base layer510, color filters 520 on the base layer 510, a black matrix 530, and anovercoat layer 540.

The color filters 520 may be arranged considering the color of lightemitted from each of the pixels of the display device 10. For example,the color filter 520 may have a red, green, or blue color depending onthe color of light emitted from the organic light emitting diode (OLED).The color filter 520 and the black matrix 530 are not in thetransmission area TA. For example, a layer including the color filter520 and the black matrix 530 may include a hole 530OP corresponding tothe transmission area TA, and the hole 530OP may be at least partiallyfilled with a portion of the overcoat layer 540. The overcoat layer 540may include an organic material such as resin, and the organic materialmay be transparent.

According to some example embodiments, the anti-reflection layer mayinclude a destructive interference structure. The destructiveinterference structure may include a first reflection layer and a secondreflection layer arranged on different layers. First reflected light andsecond reflected light respectively reflected by the first reflectionlayer and the second reflection layer may destructively interfere witheach other, and accordingly, the external light reflectance may bereduced.

The component 20 may be located in the second display area DA2. Thecomponent 20 may include an electronic element using light or sound. Forexample, the electronic element may include a sensor (e.g., as aproximity sensor) for measuring a distance, a sensor for recognizing aportion of a user's body (e.g., a fingerprint, an iris, or a face), asmall lamp for outputting light, or an image sensor (e.g., a camera) forcapturing an image. The electronic element using light may use light ofvarious wavelength bands such as visible light, infrared light, andultraviolet light. The electronic element using sound may use ultrasoundor sound of other frequency bands.

One component 20 may be arranged in the second display area DA2, or aplurality of components 20 may be arranged therein. According to someexample embodiments, the component 20 may include a light emitter and alight receiver. The light emitter and the light receiver may be anintegrated structure or may be a physically separated structure in whicha pair of light emitter and light receiver may form one component 20.

FIG. 3 is a plan view schematically illustrating a display deviceaccording to some example embodiments.

Referring to FIG. 3 , a display device 10 may include an array of aplurality of pixels arranged on a substrate 100. The plurality of pixelsmay include first pixels P1 arranged in a first display area DA1 andsecond pixels P2 arranged in a second display area DA2, and an image maybe provided by using the light emitted from a display element includedin each of the plurality of pixels.

A display area DA may include the first display area DA1 and the seconddisplay area DA2, wherein the area of the first display area DA1 and thearea of the second display area DA2 may be different from each other.The area of the first display area DA1 may be larger than the area ofthe second display area DA2, and the second display area DA2 may beentirely surrounded by the first display area DA1.

The first pixels P1 may be two-dimensionally arranged in the firstdisplay area DA1, and the second pixels P2 may be two-dimensionallyarranged in the second display area DA2. A transmission area TA may bearranged in the second display area DA2. The transmission area TA may bearranged between adjacent second pixels P2.

A non-display area NDA may entirely surround the display area DA. A scandriver, a data driver, or the like may be arranged in the non-displayarea NDA. A pad 230 may be located in the non-display area NDA. The pad230 may be arranged adjacent to one side edge of the substrate 100. Thepad 230 may be exposed by not being covered by an insulating layer andmay be electrically connected to a flexible printed circuit board FPCB.The flexible printed circuit board FPCB may electrically connect acontroller to the pad 230 and may supply a signal or power transmittedfrom the controller. In some embodiments, a data driver may be arrangedin the flexible printed circuit board FPCB. In order to transmit signalsor voltages from the flexible printed circuit board FPCB to the firstand second pixels P1 and P2, the pad 230 may be connected to a pluralityof lines.

According to some example embodiments, instead of the flexible printedcircuit board FPCB, an integrated circuit IC may be arranged on the pad230. The integrated circuit IC may include, for example, a data driverand may be electrically connected to the pad 230 through an anisotropicconductive film including conductive balls.

FIG. 4 is an equivalent circuit diagram schematically illustrating anyone pixel of a display device according to some example embodiments.

Each of a first pixel P1 and a second pixel P2 may include an organiclight emitting diode OLED as a display element. The organic lightemitting diode OLED may be electrically connected to or driven by apixel circuit PC. The pixel circuit PC may include a first thin filmtransistor T1, a second thin film transistor T2, and a storage capacitorCst. Each organic light emitting diode OLED may emit, for example, red,green, or blue light.

As a switching thin film transistor, the second thin film transistor T2may be connected to a scan line SL and a data line DL and may beconfigured to transmit a data voltage (or a data signal) Dm input fromthe data line DL to the first thin film transistor T1, based on aswitching voltage (or a switching signal) Sn input from the scan lineSL. The storage capacitor Cst may be connected to the second thin filmtransistor T2 and a driving voltage line PL and may be configured tostore a voltage corresponding to the difference between a voltagereceived from the second thin film transistor T2 and a first powervoltage ELVDD supplied to the driving voltage line PL.

As a driving thin film transistor, the first thin film transistor T1 maybe connected to the driving voltage line PL and the storage capacitorCst and may be configured to control a driving current flowing from thedriving voltage line PL through the organic light emitting diode OLED inresponse to a voltage value stored in the storage capacitor Cst. Theorganic light emitting diode OLED may emit light with a certainbrightness according to the driving current. An opposite electrode(e.g., a cathode) of the organic light emitting diode OLED may besupplied with a second power voltage ELVSS.

Although FIG. 4 illustrates that the pixel circuit PC includes two thinfilm transistors and one storage capacitor, embodiments according to thepresent disclosure are not limited thereto. The number of thin filmtransistors and the number of storage capacitors may be variouslymodified according to the design of the pixel circuit PC. For example,the pixel circuit PC may further include four or five or more thin filmtransistors in addition to the two thin film transistors describedabove. In other words, according to some example embodiments, thecomponents of the pixel circuit PC may be modified to include additionalelectronic circuit components, or fewer electronic circuit components,without departing from the spirit and scope of embodiments according tothe present disclosure.

FIG. 5A is a plan view illustrating an emission area of a first displayarea in a display device according to some example embodiments, andFIGS. 5B and 5C are plan views illustrating an emission area and atransmission area of a second display area in a display device accordingto some example embodiments.

Referring to FIG. 5A, areas where light is emitted from a displayelement provided in each of first pixels (hereinafter referred to asemission areas EA) may be arranged in a first display area DA1.According to some example embodiments, FIG. 5A illustrates that a redemission area EAr, a green emission area EAg, and a blue emission areaEAb are arranged in a pentile type. According to some exampleembodiments, a red emission area EAr, a green emission area EAg, and ablue emission area EAb may be arranged in a stripe type.

Referring to FIGS. 5B and 5C, emission areas EA where light is emittedfrom a display element provided in each of second pixels may be arrangedin a second display area DA2. A red emission area EAr, a green emissionarea EAg, and a blue emission area EAb may be arranged in a pentile typeas illustrated in FIG. 5B or may be arranged in various types such as astripe type.

A transmission area TA may be arranged adjacent to the emission areasEA. The transmission area TA may be arranged adjacent to a groupincluding red emission areas EAr, green emission areas EAg, and blueemission areas EAb. The transmission areas TA may be alternatelyarranged as illustrated in FIG. 5B or may be arranged adjacent to eachother as illustrated in FIG. 5C.

The arrangement structure of the emission areas EA illustrated in FIG.5B may have a relatively smaller area of the transmission area TA and agreater number of emission areas EA than the arrangement structure ofthe emission areas EA illustrated in FIG. 5C. According to some exampleembodiments, the arrangement of emission areas EA in the second displayarea DA2 may be the same as that illustrated in FIG. 5B or may be thesame as that illustrated in FIG. 5C. Alternatively, the arrangement ofemission areas EA in the second display area DA2 may include both thearrangement illustrated in FIG. 5B and the arrangement illustrated inFIG. 5C.

FIG. 6 is a cross-sectional view illustrating a portion of a displaydevice according to some example embodiments. FIG. 6 illustrates a firstdisplay area DA1 and a pad area PAD.

First, the first display area DA1 of FIG. 6 will be described.

A substrate 100 may include polymer resin. For example, the substrate100 may include a base layer including polymer resin and a barrier layerof an inorganic insulating layer. For example, the substrate 100 mayinclude a first base layer 101, a first barrier layer 102, a second baselayer 103, and a second barrier layer 104 that are sequentially stacked.The first base layer 101 and the second base layer 103 may includepolyether sulfone, polyacrylate, polyether imide, polyethylenenaphthalate, polyethylene terephthalate, polyphenylene sulfide,polyarylate, polyimide, polycarbonate, or cellulose acetate propionate.The first barrier layer 102 and the second barrier layer 104 may includean inorganic insulating material such as silicon oxide, siliconoxynitride, and/or silicon nitride.

A back-side metal layer BMS may be arranged on the substrate 100. Theback-side metal layer BSM may be electrically connected to a line, astorage capacitor, or a transistor connected to a pixel circuit. Forexample, the back-side metal layer BSM may be electrically connected toa gate electrode, a source electrode, or a drain electrode of a thinfilm transistor TFT or may be electrically connected to any onecapacitor plate of the storage capacitor or the driving voltage line PL(see FIG. 4 ) described above with reference to FIG. 4 .

The back-side metal layer BSM may entirely cover the first display areaDA1. Alternatively, the back-side metal layer BSM may cover a portion ofthe first display area DA1. For example, the back-side metal layer BSMmay be patterned to directly overlap the thin film transistor TFT in thefirst display area DA1. In some embodiments, the back-side metal layerBSM may be omitted.

A buffer layer 111 may be arranged on the substrate 100, for example, ona back-side metal layer BSM. The buffer layer 111 may reduce or blockthe penetration of foreign materials, moisture, or external air from thebottom of the substrate 100 and may provide a flat surface on thesubstrate 100. The buffer layer 111 may include an inorganic insulatingmaterial such as silicon oxide, silicon oxynitride, or silicon nitrideand may be formed in a single-layer or multilayer structure includingthe above material.

A pixel circuit PC including a thin film transistor TFT and a storagecapacitor Cst may be arranged on the buffer layer 111. The thin filmtransistor TFT may include a semiconductor layer A1, a gate electrode G1overlapping a channel area of the semiconductor layer A1, and a sourceelectrode S1 and a drain electrode D1 respectively connected to a sourcearea and a drain area of the semiconductor layer A1. A gate insulatinglayer 112 may be located between the semiconductor layer A1 and the gateelectrode G1, and a first interlayer insulating layer 113 and a secondinterlayer insulating layer 115 may be arranged between the gateelectrode G1 and the source electrode S1 or between the gate electrodeG1 and the drain electrode D1.

The storage capacitor Cst may be arranged to overlap the thin filmtransistor TFT. The storage capacitor Cst may include a first capacitorplate CE1 and a second capacitor plate CE2 that overlap each other.According to some example embodiments, the gate electrode G1 of the thinfilm transistor TFT may include the first capacitor plate CE1 of thestorage capacitor Cst. The first interlayer insulating layer 113 may bearranged between the first capacitor plate CE1 and the second capacitorplate CE2.

The semiconductor layer A1 may include polysilicon. According to someexample embodiments, the semiconductor layer A1 may include amorphoussilicon. In some embodiments, the semiconductor layer A1 may include anoxide of at least one of indium (In), gallium (Ga), stannum (Sn),zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium(Ge), chromium (Cr), titanium (Ti), or zinc (Zn). The semiconductorlayer A1 may include a channel area and a source area and a drain areathat are doped with dopants.

The gate insulating layer 112 may include an inorganic insulatingmaterial such as silicon oxide, silicon oxynitride, or silicon nitrideand may have a single-layer or multilayer structure including the abovematerial.

The gate electrode G1 or the first capacitor plate CE1 may include alow-resistance conductive material such as molybdenum (Mo), aluminum(Al), copper (Cu), and/or titanium (Ti) and may have a single-layer ormultilayer structure including the above material.

The first interlayer insulating layer 113 may include an inorganicinsulating material such as silicon oxide, silicon oxynitride, orsilicon nitride and may have a single-layer or multilayer structureincluding the above material.

The second capacitor plate CE2 may include aluminum (Al), platinum (Pt),palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni),neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), molybdenum(Mo), titanium (Ti), tungsten (W), and/or copper (Cu) and may have asingle-layer or multilayer structure including the above material.

The second interlayer insulating layer 115 may include an inorganicinsulating material such as silicon oxide, silicon oxynitride, orsilicon nitride and may have a single-layer or multilayer structureincluding the above material.

The source electrode S1 or the drain electrode D1 may include aluminum(Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold(Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium(Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and/or copper (Cu)and may have a single-layer or multilayer structure including the abovematerial. For example, the source electrode S1 or the drain electrode D1may have a three-layer structure of titanium layer/aluminumlayer/titanium layer.

A first insulating layer 117 may include a different material than atleast one inorganic insulating layer IOL arranged thereunder, forexample, the gate insulating layer 112, the first interlayer insulatinglayer 113, or the second interlayer insulating layer 115. The firstinsulating layer 117 may include an organic insulating material. Thefirst insulating layer 117 may include an organic insulating materialsuch as acryl, benzocyclobutene (BCB), polyimide, orhexamethyldisiloxane (HMDSO). The organic insulating material of thefirst insulating layer 117 may include a photosensitive organicinsulating material.

The first insulating layer 117 may be formed through an exposure anddevelopment process using a mask having a different transmittance ineach area, such as a halftone mask, after forming a photosensitiveorganic insulating material on the substrate 100. The first insulatinglayer 117 formed by the above method may have different heights in therespective portions. Herein, the height may refer to the height from thetop surface of the substrate 100.

The first insulating layer 117 may include a first portion 117Aoverlapping a pixel electrode 221 described below, and a second portion1176 adjacent to the pixel electrode 221 without overlapping the pixelelectrode 221. A first height H1 of the first portion 117A of the firstinsulating layer 117 from the substrate 100 may be smaller than a secondheight H2 of the second portion 1176 of the first insulating layer 117therefrom. For example, a first height H1 from the top surface of thesubstrate 100 to the top surface of the first portion 117A of the firstinsulating layer 117 may be smaller than a second height H2 from the topsurface of the substrate 100 to the top surface of the second portion1176 of the first insulating layer 117.

The pixel electrode 221 may contact the top surface of the first portion117A of the first insulating layer 117. The pixel electrode 221 may beelectrically connected to the thin film transistor TFT through a contacthole formed in the first insulating layer 117.

The pixel electrode 221 may include a reflection layer including silver(Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold(Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or anycompound thereof. The pixel electrode 221 may include a reflection layerincluding the above material, and a transparent conductive layerarranged over and/or under the reflection layer. The transparentconductive layer may include indium tin oxide (ITO), indium zinc oxide(IZO), zinc oxide (ZnO), indium oxide (In₂O₃), indium gallium oxide(IGO), or aluminum zinc oxide (AZO). According to some exampleembodiments, the pixel electrode 221 may have a three-layer structure ofITO layer/Ag layer/ITO layer sequentially stacked.

A second insulating layer 119 may be arranged on the pixel electrode221. The second insulating layer 119 may cover the edge of the pixelelectrode 221 and may include an opening 119OP overlapping the centerportion of the pixel electrode 221.

The second insulating layer 119 may include a colored material. Forexample, the second insulating layer 119 may include a colored pigment,for example, a pigment of white color, black color, or other color.According to some example embodiments, the second insulating layer 119may have a black color. For example, a pixel definition layer 180 mayinclude a polyimide (PI)-based binder and a pigment in which red, green,and blue colors are mixed. Alternatively, the second insulating layer119 may include a cardo-based binder resin and a mixture of lactam-basedblack pigment and blue pigment. Alternatively, the second insulatinglayer 119 may include a carbon black.

Because the second insulating layer 119 includes a colored material, itmay prevent or reduce the reflection of external light. The secondinsulating layer 119 including a colored pigment may prevent or reducethe reflection of external light traveling from the outside toward thedisplay device and may improve the contrast of the display device.

The shape of the top surface of the second insulating layer 119 maydepend on the different height of each portion of the first insulatinglayer 117 formed thereunder. A fourth height H4 of a first portion 119Aof the second insulating layer 119 may be smaller than a fifth height H5of a second portion 119B of the second insulating layer 119. Forexample, a fourth height H4 from the top surface of the substrate 100 tothe top surface of the first portion 119A of the second insulating layer119 may be smaller than a fifth height H2 from the top surface of thesubstrate 100 to the top surface of the second portion 119B of thesecond insulating layer 119. The first portion 119A of the secondinsulating layer 119 may overlap the first portion 117A of the firstinsulating layer 117, and the second portion 119B of the secondinsulating layer 119 may overlap the second portion 117B of the firstinsulating layer 117.

The second portion 1196 of the second insulating layer 119 may preventor reduce damage to layers arranged under a mask used in the process offorming an emission layer 222 b of an intermediate layer 222 describedbelow, for example, the pixel electrode 221 and/or the first portion119A of the second insulating layer 119. The fifth height H5 may begreater than the fourth height H4 by about 0.5 μm or more, for example,about 1 μm or more.

The intermediate layer 222 may include an emission layer 222 boverlapping the pixel electrode 221. The emission layer 222 b mayinclude an organic material. The emission layer 222 b may include ahigh-molecular or low-molecular weight organic material for emittinglight of a certain color. The emission layer 222 b may be formed througha deposition process using a mask as described above.

A first functional layer 222 a and a second functional layer 222 c maybe arranged under and/or over the emission layer 222 b.

The first functional layer 222 a may include a single layer or amultiple layer. For example, when the first functional layer 222 a isformed of a high-molecular weight material, the first functional layer222 a may include a hole transport layer (HTL) having a single-layerstructure and may be formed of poly-(3,4)-ethylene-dioxy thiophene(PEDOT) or polyaniline (PANI). When the first functional layer 222 a isformed of a low-molecular weight material, the first functional layer222 a may include a hole injection layer (HIL) and an HTL.

The second functional layer 222 c may be optional. For example, when thefirst functional layer 222 a and the emission layer 222 b are formed ofa high-molecular weight material, the second functional layer 222 c maybe formed. The second functional layer 222 c may include a single layeror a multiple layer. The second functional layer 222 c may include anelectron transport layer (ETL) and/or an electron injection layer (EIL).

Each of the first functional layer 222 a and the second functional layer222 c may be integrally formed to entirely cover a display area, forexample, the first display area DA1 and a second display area DA2described below with reference to FIG. 7 .

An opposite electrode 223 may include a conductive material having arelatively low work function. For example, the opposite electrode 223may include a (semi)transparent layer including silver (Ag), magnesium(Mg), aluminum (Al), nickel (Ni), chromium (Cr), lithium (Li), calcium(Ca), or any alloy thereof. Alternatively, the opposite electrode 223may further include a layer such as ITO, IZO, ZnO, or In₂O₃ on the(semi)transparent layer including the above material. According to someexample embodiments, the opposite electrode 223 may include silver (Ag)and magnesium (Mg).

The stack structure of the pixel electrode 221, the intermediate layer222, and the opposite electrode 223 sequentially stacked may form alight emitting diode, for example, an organic light emitting diode OLED.The organic light emitting diode OLED may be covered by a thin filmencapsulation layer 300.

The thin film encapsulation layer 300 may include first and secondinorganic encapsulation layers 310 and 330 and an organic encapsulationlayer 320 therebetween.

The first and second inorganic encapsulation layers 310 and 330 may eachinclude one or more inorganic insulating materials. The inorganicinsulating material may include aluminum oxide, titanium oxide, tantalumoxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and/orsilicon oxynitride. The first and second inorganic encapsulation layers310 and 330 may be formed through chemical vapor deposition.

The organic encapsulation layer 320 may include a polymer-basedmaterial. The polymer-based material may include acrylic resin, epoxyresin, polyimide, polyethylene, or the like. For example, the organicencapsulation layer 320 may include acrylic resin such as polymethylmethacrylate or polyacrylic acid. The organic encapsulation layer 320may be formed by curing a monomer or applying a polymer.

Next, the pad area PAD of FIG. 6 will be described in more detail.

A pad 230 may be formed on at least one inorganic insulating layer IOL,for example, on the second interlayer insulating layer 115. The pad 230may be formed of the same material as the source electrode S1 or thedrain electrode D1 of the thin film transistor TFT.

The first insulating layer 117 may include a third portion 117Cextending into the pad area PAD. The third portion 117C may include anopening 1170P overlapping the pad 230. The third portion 117C of thefirst insulating layer 117 may cover the edge of the pad 230. The thirdportion 117C of the first insulating layer 117 may have a smaller heightthan the first portion 117A and the second portion 117B for connectionbetween an electronic structure 250 and the pad 230. For example, athird height H3 from the top surface of the substrate 100 to the topsurface of the third portion 117C of the first insulating layer 117 maybe smaller than the first height H1 and the second height H2 describedabove.

The pad 230 may be electrically connected to the electronic structure250 through the opening 1170P of the third portion 117C. A conductivematerial layer 240 may be located between the pad 230 and the electronicstructure 250 to electrically connect the pad 230 to the electronicstructure 250.

The electronic structure 250 may include a data driver, lines forproviding a first power voltage and/or a second power voltage, and acircuit structure capable of providing various control signals topixels. The electronic structure 250 may include the flexible printedcircuit board FPCB described with reference to FIG. 3 or may include achip-type integrated circuit (IC).

The conductive material layer 240 may be a bump included in theelectronic structure 250. For example, the electronic structure 250 maybe electrically connected to the pad 230 by the bump provided at thebottom thereof to directly contact the pad 230. Alternatively, theconductive material layer 240 may be a conductive adhesive layer such asan anisotropic conductive film. In this case, the bump of the electronicstructure 250 may contact a conductive ball included in the conductivematerial layer 240 that is an anisotropic conductive film, and theconductive ball may contact the pad 230 such that the electronicstructure 250 may be electrically connected to the pad 230.

FIGS. 7 and 8 are cross-sectional views illustrating a portion of adisplay device according to some example embodiments. FIGS. 7 and 8illustrate a second display area DA2.

Referring to FIG. 7 , the second display area DA2 may include atransmission area TA, and two pixel circuits PC and two organic lightemitting diodes OLED may be arranged adjacent to each other with thetransmission area TA therebetween. Each organic light emitting diodeOLED may be electrically connected to each pixel circuit PC. The organiclight emitting diode OLED described with reference to FIG. 6 may be adisplay element included in the first pixel arranged in the firstdisplay area DA1 (see FIG. 6 ), and the organic light emitting diodeOLED illustrated in FIG. 7 may correspond to a display element includedin the second pixel arranged in the display area DA2.

The structure of the organic light emitting diode OLED and the structureof the pixel circuit PC including a thin film transistor TFT and astorage capacitor Cst illustrated in FIG. 7 may be substantially thesame as the structures described above with reference to FIG. 6 . Thatis, the cross-sectional structure of the organic light emitting diodeOLED and the thin film transistor TFT corresponding to the first pixelof the first display area DA1 may be the same as the cross-sectionalstructure of the organic light emitting diode OLED and thin filmtransistor TFT corresponding to the second pixel of the second displayarea DA2. Thus, the descriptions of the particular structure of theorganic light emitting diode OLED and the structure of the thin filmtransistor TFT and the storage capacitor Cst will be replaced with theabove descriptions, and hereinafter, the differences thereof will bemainly described and some repetitive description of certain componentsmay be omitted.

Insulating layers on a substrate 100, for example, at least oneinorganic insulating layer IOL, a first insulating layer 117, or asecond insulating layer 119, may include holes corresponding to thetransmission area TA. The at least one inorganic insulating layer IOLmay include at least one of a gate insulating layer 112, a firstinterlayer insulating layer 113, or a second interlayer insulating layer115.

A first hole IOL-H of the at least one inorganic insulating layer IOL, asecond hole 117H of the first insulating layer 117, or a third hole 119Hof the second insulating layer 119 may overlap with other in thetransmission area TA. According to some example embodiments, the bufferlayer 111 may have a hole in the transmission area TA. An oppositeelectrode 223 may also include a fourth hole 223H located in thetransmission area TA, and the fourth hole 223H may overlap the firsthole IOL-H, the second hole 117H, and the third hole 119H.

Some of the insulating layers, for example, a buffer layer 111 and asecond barrier layer 104, may not include a hole located in thetransmission area TA. For example, as illustrated in FIG. 7 , the bufferlayer 111 and the second barrier layer 104 may cover the transmissionarea TA. According to some example embodiments, the buffer layer 111and/or the second barrier layer 104 may include a hole located in thetransmission area TA.

A first portion 117A of the first insulating layer 117 may overlap anopening 1190P of the second insulating layer 119. Because the opening1190P of the second insulating layer 119 may define an emission area EA,the first portion 117A of the first insulating layer 117 may overlap theemission area EA. The fact that two adjacent organic light emittingdiodes OLED are spaced apart from each other with the transmission areaTA therebetween may correspond to the fact that two adjacent emissionareas EA are spaced apart from each other with the transmission area TAtherebetween. Similarly, second portions 117B of two adjacent firstinsulating layers 117 may be spaced apart from each other with thetransmission area TA therebetween.

Portions of an intermediate layer 222 of the organic light emittingdiode OLED, for example, a first functional layer 222 a and/or a secondfunctional layer 222 c, may be integrally formed to cover thetransmission area TA. Alternatively, like the opposite electrode 223,the first functional layer 222 a and/or the second functional layer 222c may include a hole corresponding to the transmission area TA.

Because a thin film encapsulation layer 300 entirely covers a displayarea, it may continuously cover the first display area DA1 (see FIG. 6 )and the second display area DA2. A first inorganic encapsulation layer310, an organic encapsulation layer 320, and a second inorganicencapsulation layer 330 may cover the transmission area TA.

The light traveling in the direction from the thin film encapsulationlayer 300 toward the substrate 100 (e.g., the light emitted from theorganic light emitting diode and other external light) may travel to acomponent 20 through the transmission area TA, and the light travelingtoward the substrate 100 may be diffracted by a narrow gap between thelines arranged in the second display area DA2. The above lines may beformed on the same layer as the gate electrode G1, the source electrodeS1, or the drain electrode D1 of the thin film transistor TFT or thefirst capacitor plate CE1 or the second capacitor plate CE2 of thestorage capacitor Cst.

When the light traveling toward the substrate 100 is diffracted, becausethe diffracted light may also reach the component 20, the signal orimage received by the component 20 may be distorted. However, when thesecond insulating layer 119 includes a colored material as in someexample embodiments, because the external light may be absorbed by thesecond insulating layer 119, the above-described diffraction problem maybe prevented or reduced.

When a back-side metal layer BSM is arranged under the second insulatinglayer 119, the back-side metal layer BSM may effectively prevent orreduce the diffraction of light together with the second insulatinglayer 119 described above. According to some example embodiments, evenwhen there is light that is not yet absorbed by the second insulatinglayer 119, the light may be blocked by the back-side metal layer BSM. Inthis case, in order to secure the transmittance of the transmission areaTA, the back-side metal layer BSM may include a hole BSM-H correspondingto the transmission area TA.

The back-side metal layer BSM may be electrically connected to aconductive line CL. The conductive line CL may be electrically connectedto the gate electrode, the source electrode, or the drain electrode ofthe thin film transistor TFT or may be electrically connected to any onecapacitor plate of the storage capacitor Cst. Alternatively, theconductive line CL may be electrically connected to the driving voltageline PL (see FIG. 4 ) passing through the display area, for example, thesecond display area DA2. By the conductive line CL, the back-side metallayer BSM may be electrically connected to the gate electrode, thesource electrode, or the drain electrode of the thin film transistorTFT, may be electrically connected to any one capacitor plate of thestorage capacitor, or may be electrically connected to the drivingvoltage line. The back-side metal layer BSM connected to the conductiveline CL may protect the thin film transistor TFT from the externalstatic electricity or improve the performance of the thin filmtransistor TFT.

Referring to FIGS. 6 and 7 , the back-side metal layer BSM may beintegrally formed and may include an area corresponding to a portion ofthe first display area DA1 and the second display area DA2 except thetransmission area TA. According to some example embodiments, theback-side metal layer BSM may not be in the first display area DA1.According to some example embodiments, the back-side metal layer BSM maybe locally located to overlap the thin film transistor TFT arranged ineach of the first display area DA1 and the second display area DA2. Insome embodiments, the back-side metal layer BSM may not be in the seconddisplay area DA2 as illustrated in FIG. 8 .

FIGS. 7 and 8 illustrate that the thin film encapsulation layer 300covers the organic light emitting diode OLED; however, according to someexample embodiments, the organic light emitting diode OLED may becovered with an encapsulation substrate such as a glass.

FIG. 9 is a cross-sectional view illustrating a portion of a displaydevice according to some example embodiments. FIG. 9 illustrates anembodiment which has substantially the same structure as the embodimentdescribed with reference to FIG. 7 or 8 and in which an encapsulationsubstrate 300B is arranged instead of the thin film encapsulation layer300 of FIG. 7 or 8 .

A substrate 100 may include a glass material, and an encapsulationsubstrate 300B may also include a glass material. The substrate 100 andthe encapsulation substrate 300B may each include a glass substrate. Aninternal space IS may be defined between the substrate 100 and theencapsulation substrate 300B, and an air layer may be in the internalspace IS. Alternatively, a fluid layer may be in the internal space IS.The fluid layer may include a transparent material having a refractiveindex similar to that of the substrate 100 and the encapsulationsubstrate 300B. The transparent material may include a liquidtransparent material. The transparent material may include epoxy,urethane acrylate, or epoxy acrylate or silicone (e.g., bisphenol A typeepoxy, cycloaliphatic epoxy resin, phenyl silicone resin or rubber,acrylic epoxy resin, or aliphatic urethane acrylate)-based resin.Alternatively, silicone or silicone oil having no phase change in thetemperature range of about −40° C. to about 100° C. and having a volumechange rate within about 5%, for example, at least one material selectedfrom hexamethyldisiloxane, octamethyltrisiloxane,decamethyltetrasiloxane, dodecamethylpentasiloxane, orpolydimethylsiloxanes, may be used.

Aspects of some example embodiments according to the present disclosuremay include a display device and an electronic apparatus including thesame, which may prevent or reduce instances of degradation of a displayelement with respect to external light, may reduce the noise included ininformation to be obtained from a component such as a camera by reducingthe external light propagating to the component, and/or may simplify aprocess thereof. However, these effects are merely examples and thescope of embodiments according to the present disclosure is not limitedthereto.

It should be understood that embodiments described herein should beconsidered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each embodimentshould typically be considered as available for other similar featuresor aspects in other embodiments. While one or more example embodimentshave been described with reference to the figures, it will be understoodby those of ordinary skill in the art that various changes in form anddetails may be made therein without departing from the spirit and scopeas defined by the following claims and their equivalents.

What is claimed is:
 1. A display device comprising: a substrate; twopixel circuits on the substrate and spaced apart from each other with atransmission area therebetween, the two pixel circuits each including atransistor and a storage capacitor; a first insulating layer on the twopixel circuits; two pixel electrodes on the first insulating layer andrespectively connected to the two pixel circuits; a second insulatinglayer including a first portion covering an edge of each of the twopixel electrodes and a second portion adjacent to the first portion,wherein the first insulating layer includes: a third portion overlappingeach of the two pixel electrodes; and a fourth portion adjacent to thethird portion and having a height greater than a height from thesubstrate to a top surface of the third portion, wherein the firstportion of the second insulating layer overlaps the third portion, andthe second portion of the second insulating layer overlaps the fourthportion, wherein a height from the substrate to a top surface of thesecond portion is greater than a height from the substrate to a topsurface of the first portion; and a back-side metal layer locatedbetween the substrate and the two pixel circuits, wherein the back-sidemetal layer includes a hole corresponding to the transmission area. 2.The display device of claim 1, wherein the second insulating layerincludes a colored pigment or a carbon black.
 3. The display device ofclaim 1, wherein each of the first insulating layer and the secondinsulating layer includes a hole corresponding to the transmission area.4. The display device of claim 1, further comprising at least oneinorganic insulating layer between the substrate and the firstinsulating layer, wherein the at least one inorganic insulating layerincludes a hole corresponding to the transmission area.
 5. The displaydevice of claim 1, wherein the first insulating layer includes aphotosensitive organic insulating material.
 6. The display device ofclaim 1, further comprising: an opposite electrode facing the two pixelelectrodes; and an intermediate layer between each of the two pixelelectrodes and the opposite electrode.
 7. The display device of claim 6,wherein the opposite electrode includes a hole corresponding to thetransmission area.
 8. The display device of claim 6, wherein theintermediate layer includes: an emission layer overlapping each of thepixel electrodes, and a functional layer under or over the emissionlayer.
 9. A display device comprising: a substrate; and an array of aplurality of pixels including two pixels arranged on the substrate andspaced apart from each other with a transmission area therebetween,wherein each of the two pixels includes: a pixel circuit including astorage capacitor and a thin film transistor that are on the substrate;a first insulating layer on the pixel circuit; a pixel electrode on thefirst insulating layer and electrically connected to the pixel circuitthrough a contact hole of the first insulating layer; a secondinsulating layer including a first portion covering an edge of the pixelelectrode and a second portion adjacent to the first portion; anopposite electrode facing the pixel electrode; and an emission layerbetween the pixel electrode and the opposite electrode, wherein thefirst portion and the second portion of the second insulating layerinclude a colored material, wherein a height from the substrate to a topsurface of the second portion is greater than a height from thesubstrate to a top surface of the first portion.
 10. The display deviceof claim 9, wherein the first insulating layer includes: a third portionoverlapping the pixel electrode; and a fourth portion adjacent to thethird portion and having a height greater than a height from thesubstrate to a top surface of the third portion, wherein a height fromthe substrate to a top surface of the third portion and a height fromthe substrate to a top surface of the fourth portion are different fromeach other.
 11. The display device of claim 10, wherein the firstportion of the second insulating layer overlaps the third portion andthe second portion of the second insulating layer overlaps the fourthportion.
 12. The display device of claim 9, wherein the secondinsulating layer includes a colored pigment or a carbon black.
 13. Thedisplay device of claim 9, wherein each of the first insulating layerand the second insulating layer includes a hole corresponding to thetransmission area.
 14. The display device of claim 13, furthercomprising at least one inorganic insulating layer between the substrateand the first insulating layer, wherein the at least one inorganicinsulating layer includes a hole corresponding to the transmission area.15. The display device of claim 9, wherein the opposite electrodeincludes a hole corresponding to the transmission area.
 16. Anelectronic apparatus comprising: a display device including a displayarea including a transmission area and a non-display area surroundingthe display area; a component overlapping at least the transmissionarea, wherein the display device includes: a substrate; a pixel circuitin the display area and including a storage capacitor and a thin filmtransistor on the substrate; a first insulating layer on the pixelcircuit; a pixel electrode on the first insulating layer andelectrically connected to the pixel circuit through a contact hole ofthe first insulating layer; and a second insulating layer including afirst portion covering an edge of the pixel electrode and a secondportion adjacent to the first portion, wherein the first portion and thesecond portion of the second insulating layer include a coloredmaterial, wherein a height from the substrate to a top surface of thesecond portion is greater than a height from the substrate to a topsurface of the first portion; and a back-side metal layer locatedbetween the substrate and the pixel electrode, wherein the back-sidemetal layer includes a hole corresponding to the transmission area. 17.The electronic apparatus of claim 16, wherein the second insulatinglayer includes a colored pigment or a carbon black.
 18. The electronicapparatus of claim 17, wherein the second insulating layer includes ahole corresponding to the transmission area.
 19. The electronicapparatus of claim 17, wherein the first insulating layer includes: athird portion overlapping the pixel electrode; and a fourth portionadjacent to the third portion and having a height greater than a heightfrom the substrate to a top surface of the third portion, wherein aheight from the substrate to a top surface of the third portion issmaller than a height from the substrate to a top surface of the fourthportion.
 20. The electronic apparatus of claim 19, wherein the firstinsulating layer includes a photosensitive organic insulating material.21. The electronic apparatus of claim 19, wherein the first insulatinglayer includes a hole corresponding to the transmission area.
 22. Theelectronic apparatus of claim 19, wherein the component includes acamera or a sensor using light.